Electrical compensation in semi-insulating GaAs

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Abstract
Identification of the deep levels responsible for the electrical compensation of Cr‐doped semi‐insulating GaAs has been lacking in spite of the increasing importance of this material. Transport measurements on bulk‐grown semi‐insulating GaAs single crystals with three different Cr concentrations are presented to shed light on this problem. Alternative models for the electrical compensation are discussed. A detailed analysis of the temperature dependence of the resistivity shows that the ’’conventional’’ model in which deep Cr acceptors compensate residual shallow donors is incorrect. A more elaborate model which includes both a deep acceptor and a deep donor is proposed to properly interpret the experimental data. The deep donor level, located between 0.64 and 0.72 eV from the conduction band, is assigned to oxygen.

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