Photoconductivity of Chromium-Doped Gallium Arsenide
- 1 August 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (9) , 3483-3486
- https://doi.org/10.1063/1.1710156
Abstract
Measurements of the dc photoconductivity of chromium‐doped semi‐insulating GaAs have been made in the wavelength range 0.5–2.0 μ at temperatures of 290° and 80°K. High photoconductive gains of greater than 1000 have been observed with a low light level response extending to less than 10−14 W. A sharp peak in the response is observed at a wavelength of 1.40–1.45 μ having an external photoconductive gain of the same order of magnitude as that at the band edge. Possible mechanisms for this peak are discussed.This publication has 8 references indexed in Scilit:
- Optical Absorption in Chromium Doped, High Resistivity GaAs in the 0.6 to 1.5 ev RangeJournal of the Electrochemical Society, 1966
- The Preparation of Semi-Insulating Gallium Arsenide by Chromium DopingJournal of the Electrochemical Society, 1964
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- Preparation and characterization of high resistivity GaAsJournal of Physics and Chemistry of Solids, 1962
- Photoconductivity in semi-insulating gallium arsenideJournal of Physics and Chemistry of Solids, 1961
- Properties of Semi-Insulating GaAsJournal of Applied Physics, 1961
- Properties of High-Resistivity Gallium Arsenide Compensated with Diffused CopperJournal of Applied Physics, 1961
- Gallium Arsenide as a Semi-insulatorNature, 1960