Properties of High-Resistivity Gallium Arsenide Compensated with Diffused Copper

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Abstract
Low‐resistivity n‐type GaAs crystals with silicon donors are compensated with diffused copper to produce high‐resistivity crystals in a manner which is amenable to semiquantitative description in terms of a simple thermodynamic model. The high‐resistivity GaAs:Cu crystals are subjected to photoelectronic analysis, including room temperature Hall and photo‐Hall measurements, to obtain information about the effects of deep‐lying imperfections on the properties of the initial n‐type GaAs. In addition to three deep donors previously reported, five acceptors are revealed. A 0.42‐ev acceptor level, when compensated, provides a long electron lifetime resulting in high n‐type photosensitivity at low temperatures. Evidence for effects on the electron mobility is obtained for compensated deep donor levels, important mainly in high‐resistivity n‐type material, and for compensated acceptors lying 0.22 ev above the valence band, important mainly at low temperatures.