Diffusion, solubility, and electrical behavior of copper in gallium arsenide
- 1 August 1958
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 6 (2-3) , 173-177
- https://doi.org/10.1016/0022-3697(58)90091-x
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- The preparation and properties of gallium arsenide single crystalsJournal of Physics and Chemistry of Solids, 1958
- Effect of Structural Defects in Germanium on the Diffusion and Acceptor Behavior of CopperJournal of Applied Physics, 1957
- Electrolysis of copper in solid siliconJournal of Physics and Chemistry of Solids, 1957
- Triple Acceptors in GermaniumPhysical Review B, 1957
- Mechanism of Diffusion of Copper in GermaniumPhysical Review B, 1956
- Copper Precipitation on Dislocations in SiliconJournal of Applied Physics, 1956
- Structure Sensitivity of Cu Diffusion in GePhysical Review B, 1956
- Copper in Germanium: Recombination Center and Trapping CenterPhysical Review B, 1956
- On the Behavior of Rapidly Diffusing Acceptors in GermaniumJournal of the Electrochemical Society, 1955
- Diffusivity and Solubility of Copper in GermaniumPhysical Review B, 1954