Preparation and characterization of high resistivity GaAs
- 1 July 1962
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 23 (7) , 829-836
- https://doi.org/10.1016/0022-3697(62)90140-3
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Properties of Semi-Insulating GaAsJournal of Applied Physics, 1961
- Energy-Level Model for High-Resistivity Gallium ArsenideNature, 1961
- Properties of High-Resistivity Gallium Arsenide Compensated with Diffused CopperJournal of Applied Physics, 1961
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960
- Gallium Arsenide as a Semi-insulatorNature, 1960
- Properties ofp-Type GaAs Prepared by Copper DiffusionJournal of Applied Physics, 1960
- Photoelectronic Analysis of High Resistivity Crystals: (a) GaAs, (b) Sb2S3Journal of Applied Physics, 1960
- The preparation and properties of gallium arsenide single crystalsJournal of Physics and Chemistry of Solids, 1958