A model relating electrical properties and impurity concentrations in semi-insulating GaAs
- 1 March 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (3) , 1262-1267
- https://doi.org/10.1063/1.323769
Abstract
The 300 °K resistivity and Hall mobility of semi‐insulating GaAs can be understood in terms of a model involving four impurity levels, including the deep acceptor Cr and the deep donor O. Neutral impurity scattering is shown to be an important mechanism in this material, and an empirical expression for this component of the mobility is derived. Comparison of mass‐spectrographic and Hall‐effect data using this model permits the estimation of the electrically active impurity concentrations. Several cases are discussed in which these estimates lead to predictions of surface conversion which agree well with experiment.This publication has 16 references indexed in Scilit:
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