Electron Mobility in High-Purity GaAs

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Abstract
The combination of polar optical phonon, piezoelectric acoustic photon, deformation potential acoustic phonon, ionized impurity, and neutral impurity scattering in the relaxation time approximation is shown to give results which are in good agreement with the temperature and concentration dependence of the electron mobility in high‐purity GaAs. For polar optical phonon scattering a relaxation time is defined at each temperature from Ehrenreich's variational calculation. Since most of the parameters are well known, the only adjustable parameter in the calculation is the conduction band deformation potential with the best agreement with experiment given by | E1 | = 7.0 eV. Using this value a 77°K lattice scattering limited mobility of 240 000 cm2/V sec is obtained.

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