Silicon-Doped Gallium Arsenide Grown from Gallium Solution: Silicon Site Distribution
- 1 September 1969
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (10) , 4200-4202
- https://doi.org/10.1063/1.1657165
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Si- and Ge-Doped GaAs p-n JunctionsJapanese Journal of Applied Physics, 1969
- Local-Mode Absorption and Defects in Compensated Silicon-Doped Gallium ArsenideJournal of Applied Physics, 1968
- Luminescence in Silicon-Doped GaAs Grown by Liquid-Phase EpitaxyJournal of Applied Physics, 1968
- SITE TRANSFER OF Si IN GaAsApplied Physics Letters, 1968
- Theory of vibrations of pairs of defects in siliconJournal of Physics and Chemistry of Solids, 1967
- Neutron-induced type changes in p-type siliconJournal of Physics and Chemistry of Solids, 1967
- EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°KApplied Physics Letters, 1966
- Local Mode Absorption in Compensated Silicon-Doped Gallium ArsenideJournal of Applied Physics, 1966