Growth of high-quality GaAs using trimethylgallium and diethylarsine
- 27 April 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (17) , 1194-1196
- https://doi.org/10.1063/1.97908
Abstract
In this letter we report the growth of high-quality gallium arsenide using trimethylgallium and diethylarsine. The epitaxial layers had excellent morphology, an n-type background free-carrier concentration as low as 3×1014 cm−3 and a liquid nitrogen temperature mobility as high as 64 600 cm2/V s. The low-temperature (2 K) photoluminescence spectrum has well-resolved excitonic peaks, confirming the high quality of the material.Keywords
This publication has 14 references indexed in Scilit:
- MOCVD in inverted stagnation point flowJournal of Crystal Growth, 1986
- OMCVD growth of GaAs and AlGaAs using a solid as sourceJournal of Electronic Materials, 1985
- Chemical beam epitaxy of InP and GaAsApplied Physics Letters, 1984
- OMVPE growth of GaInAsJournal of Crystal Growth, 1983
- A new approach to MOCVD of indium phosphide and gallium-indium arsenideJournal of Crystal Growth, 1981
- Improved mobility in OM-VPE-grown Ga
1−
x
In
x
AsElectronics Letters, 1981
- The organometallic VPE growth of GaAs1−ySby using trimethylantimony and Ga1−xInxAs using trimethylarsenicJournal of Electronic Materials, 1980
- Surface and interface depletion corrections to free carrier-density determinations by hall measurementsSolid-State Electronics, 1979
- A feedback method for investigating carrier distributions in semiconductorsIEEE Transactions on Electron Devices, 1972
- SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATESApplied Physics Letters, 1968