SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES
- 15 February 1968
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 12 (4) , 156-159
- https://doi.org/10.1063/1.1651934
Abstract
Chemical vapor deposition has been been used successfully for the attainment of a single‐crystal growth of gallium arsenide directly on a number of single‐crystal insulating oxide substrates. Several orientation relationships have been determined for GaAs grown on sapphire (α‐Al2O3), spinel (MgAl2O4), beryllium oxide (BeO), and thorium oxide (ThO2).Keywords
This publication has 5 references indexed in Scilit:
- Orientation Relationships in the Heteroepitaxial Tungsten-on-Sapphire SystemJournal of Applied Physics, 1966
- Single-Crystal Silicon on SpinelJournal of Applied Physics, 1966
- Residual stress in epitaxial silicon film on sapphireSolid-State Electronics, 1965
- Deformation of and Stress in Epitaxial Silicon Films on Single-Crystal SapphireJournal of Applied Physics, 1965
- Single-Crystal Silicon on a Sapphire SubstrateJournal of Applied Physics, 1964