The organometallic VPE growth of GaAs1−ySby using trimethylantimony and Ga1−xInxAs using trimethylarsenic
- 1 March 1980
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 9 (2) , 299-309
- https://doi.org/10.1007/bf02670851
Abstract
No abstract availableKeywords
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