Back-surface emitting GaAsxSb1−x LED’s (λ=1.0 μm) prepared by molecular-beam epitaxy
- 15 April 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (8) , 397-399
- https://doi.org/10.1063/1.89418
Abstract
Compositionally graded layers of GaAsxSb1−x have been grown on GaAs substrates by molecular‐beam epitaxy. Planar Zn‐diffused 50‐μm‐diam light‐emitting diodes have been prepared in GaAs0.9Sb0.1. The 1.0‐μm wavelength emission was taken out through the transparent GaAs substrate, and for a pulsed current of 100 mA, the external quantum efficiency was 0.1%.Keywords
This publication has 11 references indexed in Scilit:
- cw room-temperature InxGa1−xAs/InyGa1−yP 1.06-μm lasersApplied Physics Letters, 1976
- Spectral losses of low-OH-content optical fibresElectronics Letters, 1976
- Continuous room-temperature operation of GaAs-AlxGa1−xAs double-heterostructure lasers prepared by molecular-beam epitaxyApplied Physics Letters, 1976
- Room-temperature operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μmApplied Physics Letters, 1976
- Continuous operation of 1.0-μm-wavelength GaAs1−xSbx/AlyGa1−yAs1−xSbx double-heterostructure injection lasers at room temperatureApplied Physics Letters, 1976
- Efficient GaAs1−xSbx/AlyGa1−yAs1−xSbx double heterostructure LED’s in the 1-μm wavelength regionApplied Physics Letters, 1975
- A new technique for the preparation of low-loss and graded-index optical fibersProceedings of the IEEE, 1974
- Small-area, double-heterostructure aluminum-gallium arsenide electroluminescent diode sources for optical-fiber transmission linesOptics Communications, 1971
- Liquid Epitaxial Growth of GaAsSb and Its Use as a High-Efficiency, Long-Wavelength Threshold PhotoemitterJournal of Applied Physics, 1970
- Injection Mechanisms in GaAs Diffused Electroluminescent JunctionsPhysical Review B, 1965