Continuous operation of 1.0-μm-wavelength GaAs1−xSbx/AlyGa1−yAs1−xSbx double-heterostructure injection lasers at room temperature
- 1 January 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (1) , 19-21
- https://doi.org/10.1063/1.88563
Abstract
Double‐heterostructure GaAs1−xSbx/AlyGa1−yAs1−xSbx injection lasers have been operated continuously at room temperature for the first time. Emission was near 1.0 μm. The lowest threshold current density observed was 2.1 kA cm−2 dc.Keywords
This publication has 9 references indexed in Scilit:
- Low-threshold room-temperature double-heterostructure GaAs1−xSbx/AlyGa1−yAs1−xSbx injection lasers at 1-μm wavelengthsApplied Physics Letters, 1975
- Heterojunction lasers made of GaxIn1–xAsyP1–yand AlxGa1–xSbyAS1–ysolid solutionsSoviet Journal of Quantum Electronics, 1975
- Laser-excited photoluminescence of three-layer GaAs double-heterostructure laser materialApplied Physics Letters, 1975
- Room-temperature heterojunction laser diodes of InxGa1−xAs/InyGa1−yP with emission wavelength between 0.9 and 1.15 μmApplied Physics Letters, 1975
- Transmission properties of a low−loss near−parabolic−index fiberApplied Physics Letters, 1975
- Macroscopic deterioration of fluorescence from AlxGa1−xAs–GaAs DH material following microscopic physical damageApplied Physics Letters, 1974
- Threshold reduction by the addition of phosphorus to the ternary layers of double-heterostructure GaAs lasersApplied Physics Letters, 1974
- Continuous operation of GaAs–Ga1 − xAlxAs double-heterostructure lasers with 30 °C half-lives exceeding 1000 hApplied Physics Letters, 1973
- GaAsSb-AlGaAsSb Double Heterojunction LasersJapanese Journal of Applied Physics, 1972