Continuous operation of GaAs–Ga1 − xAlxAs double-heterostructure lasers with 30 °C half-lives exceeding 1000 h
- 15 August 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (4) , 181-183
- https://doi.org/10.1063/1.1654851
Abstract
This paper reports the first continuous operation of GaAs–Ga1 − xAlxAs double‐heterostructure (DH) junction lasers for periods of time in excess of 1000 h in a 30 °C ambient. One laser which has operated at a constant direct current for more than 1000 h has degraded only 10% from its initial 20‐mW light output. At 1000 h, the differential quantum efficiency remained essentially unchanged, but the threshold and the mode structure changed appreciably.Keywords
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