Strain-induced degradation of GaAs injection lasers

1 August 1973

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 23 (3) , 147-149
https://doi.org/10.1063/1.1654838

Abstract

This letter shows that strain is a controlling factor in the rapid degradation of GaAs double-heterostructure junction lasers. A birefringence study of these lasers reveals extensive strain fields introduced during the bonding procedure resulting from the different thermal-expansion coefficients of the materials involved. A new bonding procedure was developed which does not introduce significant strains. Lasers fabricated with the old and new bonding procedures were subjectively categorized as low, moderate, or high strained. A direct correlation was measured between low-strain and room-temperature cw laser lifetime. Lasers fabricated with the new bonding procedure have operated cw for as long as 880 h.

Keywords

This publication has 2 references indexed in Scilit:

Degradation of a Gunn diode by dislocations induced during thermocompression bonding
Applied Physics Letters, 1972
CONTINUOUS OPERATION OF GaAs JUNCTION LASERS ON DIAMOND HEAT SINKS AT 200°K
Applied Physics Letters, 1967