Degradation of a Gunn diode by dislocations induced during thermocompression bonding
- 1 August 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (3) , 107-108
- https://doi.org/10.1063/1.1654290
Abstract
Many dislocations were found to be induced when GaAs chips for Gunn diodes were mounted on a heat sinking stud by a thermocompression bonding method. By introducing dislocations into epitaxial GaAs with a bending method, dislocations were confirmed to behave as acceptors in GaAs. Degradation or increase of the low field resistance of a Gunn diode by thermocompression bonding is considered to be due to induced dislocations.Keywords
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