Threshold reduction by the addition of phosphorus to the ternary layers of double-heterostructure GaAs lasers
- 15 May 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (10) , 481-484
- https://doi.org/10.1063/1.1655020
Abstract
By the addition of phosphorus to the ternary layers of standard double‐heterostructure GaAs injection lasers, significant reductions in lasing current threshold and increases in differential quantum efficiency have been obtained. Additional measurements suggest that the improvements are connected with a reduction in optical scattering loss.Keywords
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