Optimum Stripe Width for Continuous Operation of GaAs Junction Lasers
- 15 March 1969
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (4) , 1802-1808
- https://doi.org/10.1063/1.1657850
Abstract
The continuous (cw) operation of 41 GaAs junction lasers bonded on identical copper heat sinks is investigated for different widths of the stripe metallic contact (S = 5.0, 12.7, 25.4, and 50.8 μ). The highest cw operating temperatures are consistently found for S = 12.7 μ. This behavior is in agreement with computer calculations which predict an ``optimum'' stripe width between 10 and 15 μ and a sharp reduction in cw operating temperature for S < 10 μ. The calculations are based on experimentally measured threshold current densities (Jth) at 77° and 297°K which show that Jth increases by factors of 2 or 3 when S is reduced from 12.7 to 5.0 μ. Intensity scans of mode patterns at the laser mirrors suggest that these increases in Jth are due to the effect of the unpumped regions along the junction plane on the laser mode.This publication has 16 references indexed in Scilit:
- GAUSSIAN BEAMS FROM GaAs JUNCTION LASERSApplied Physics Letters, 1968
- Optimum stimulated light powers from GaAs injection lasersIEEE Journal of Quantum Electronics, 1968
- Optical losses and efficiency in GaAs laser diodesIEEE Journal of Quantum Electronics, 1968
- The injection laserPhysica Status Solidi (b), 1968
- Improved Room-Temperature Laser Performance in GaAs Diffused-Junction DiodesJournal of Applied Physics, 1967
- Optical and Electrical Properties of Epitaxial and Diffused GaAs Injection LasersJournal of Applied Physics, 1967
- Threshold dependency on photon energy in GaAs laser diodesSolid-State Electronics, 1966
- Optical Gain and Losses of Solution-Grown Diffused GaAs Injection LasersJapanese Journal of Applied Physics, 1966
- On the optimization of the gallium arsenide injection laser for maximum CW power outputIEEE Journal of Quantum Electronics, 1966
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962