Optimum stimulated light powers from GaAs injection lasers
- 1 April 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 4 (4) , 132-135
- https://doi.org/10.1109/jqe.1968.1075057
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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- High-power pulsed GaAs laser diodes operating at room temperatureProceedings of the IEEE, 1967
- Variation of the Gain Factor of GaAs Lasers with Photon and Current DensitiesJournal of Applied Physics, 1966
- OPTIMUM DESIGN FOR A ROOM-TEMPERATURE, PULSE-OPERATED GaAs INJECTION LASERApplied Physics Letters, 1966
- On the optimization of the gallium arsenide injection laser for maximum CW power outputIEEE Journal of Quantum Electronics, 1966
- Chapter 14 Stimulated Emission in SemiconductorPublished by Elsevier ,1966
- Internal Quantum Efficiency of GaAs Electroluminescent DiodesJournal of Applied Physics, 1965
- Thermal Problems of the Injection LaserIBM Journal of Research and Development, 1965
- Effect of temperature on the stimulated emission from GaAs p-n junctionsSolid-State Electronics, 1964
- QUANTUM EFFICIENCY OF GaAs INJECTION LASERSApplied Physics Letters, 1963