Threshold dependency on photon energy in GaAs laser diodes
- 31 December 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (11-12) , 1075-1079
- https://doi.org/10.1016/0038-1101(66)90131-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Time-resolved spectral output of pulsed GaAs lasersIEEE Journal of Quantum Electronics, 1965
- Optical gain and losses of epitaxial and diffused GaAs injection lasersIEEE Journal of Quantum Electronics, 1965
- Threshold dependency on reabsorption loss in injection lasersIEEE Journal of Quantum Electronics, 1965
- Effect of temperature on the stimulated emission from GaAs p-n junctionsSolid-State Electronics, 1964
- Absorption Data of Laser-Type GaAs at 300° and 77°KJournal of Applied Physics, 1964
- Threshold Relations and Diffraction Loss for Injection LasersIBM Journal of Research and Development, 1963