Improved Room-Temperature Laser Performance in GaAs Diffused-Junction Diodes

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Abstract
Significant reduction in room‐temperature laser threshold and stimulated emission delay is obtained in diodes made from zinc‐diffused wafers (850°C—3 hours in Zn–As atmosphere) if the single‐diffusion process is modified with multiple diffusions, or, more controllably, by the addition of a post‐annealing step (∼900°C in As atmosphere) following the initial diffusion. Incremental sheet‐conductivity measurements show the zinc concentration gradient is reduced and etching studies show a lowered dislocation density near the junction after annealing. Without an annealing step, diffused‐junction diodes show consistently larger emission delays (observed above ∼200°K) than epitaxial‐junction diodes made from the same n‐type substrates. The deliberate in‐diffusion of high copper concentrations causes large delays even at 77°K. However, copper is probably not the center causing delays near room temperature because a mass spectrographic analysis did not reveal higher copper concentrations in diffused‐junction wafers than in epitaxial‐junction wafers when there was no deliberate copper doping.

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