TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GaAs LASERS
- 1 November 1964
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 5 (9) , 174-176
- https://doi.org/10.1063/1.1754104
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Light emission and electrical characteristics of epitaxial GaAs lasers and tunnel diodesSolid State Communications, 1964
- Evidence of Refrigerating Action by Means of Photon Emission in Semiconductor DiodesPhysical Review B, 1964
- Output power from GaAs lasers at room temperatureProceedings of the IEEE, 1964
- EFFECT OF DOPING ON FREQUENCY OF STIMULATED AND INCOHERENT EMISSION IN GaAs DIODESApplied Physics Letters, 1963