Light emission and electrical characteristics of epitaxial GaAs lasers and tunnel diodes
- 30 April 1964
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 2 (4) , 119-122
- https://doi.org/10.1016/0038-1098(64)90250-9
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Infrared Transmission and Fluorescence of Doped Gallium ArsenidePhysical Review B, 1964
- Electroluminescence and Photoluminescence of GaAs at 77°KPhysical Review B, 1963
- Thomas-Fermi Approach to Impure Semiconductor Band StructurePhysical Review B, 1963
- BAND-FILLING MODEL FOR GaAs INJECTION LUMINESCENCEApplied Physics Letters, 1963
- THE VOLTAGE BREAKDOWN OF GaAs ABRUPT JUNCTIONSApplied Physics Letters, 1963
- Determination of the Active Region in Light-Emitting GaAs Diodes [Letter to the Editor]IBM Journal of Research and Development, 1963