THE VOLTAGE BREAKDOWN OF GaAs ABRUPT JUNCTIONS
- 1 March 1963
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 2 (5) , 97-99
- https://doi.org/10.1063/1.1753796
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Significance of Crystallographic Polarity in the Fabrication of Junctions in InSbJournal of Applied Physics, 1962
- Ionization Rates for Holes and Electrons in SiliconPhysical Review B, 1957
- Avalanche Breakdown in GermaniumPhysical Review B, 1955
- Avalanche Breakdown in SiliconPhysical Review B, 1954