Injection Mechanisms in GaAs Diffused Electroluminescent Junctions
Open Access
- 1 March 1965
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 137 (5A) , A1583-A1590
- https://doi.org/10.1103/physrev.137.a1583
Abstract
Injection mechanisms responsible for the electroluminescence in GaAs diffused diodes are studied by examining the behavior of the emission peaks as a function of injection level, doping level, temperature, and depletion-layer widths. Three different injection mechanisms seem to be operative in providing radiation at near-band-gap energies. Models for two of these are proposed and tested. The nature of the third emission remains an open question.Keywords
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