cw room-temperature InxGa1−xAs/InyGa1−yP 1.06-μm lasers
- 15 December 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (12) , 807-809
- https://doi.org/10.1063/1.88957
Abstract
Room‐temperature cw laser operation at wavelengths between 1.06 and 1.12 μm has been obtained from double‐heterojunction structures of InxGa1−xAs/InyGa1−yP prepared by vapor‐phase epitaxy. These devices have pulsed threshold current densities as low as 1000 A/cm2 and external differential quantum efficiencies as high as 55%. Their active laser cavities are between 0.14 and 0.36 μm thick, providing fundamental transverse‐mode operation with far‐field patterns 50 to 60° wide.Keywords
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