Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ m
- 15 June 1976
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (12) , 709-711
- https://doi.org/10.1063/1.88645
Abstract
Room‐temperature cw operation has been achieved for stripe‐geometry double‐heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm. The heterostructures were grown by liquid‐phase epitaxy on melt‐grown InP substrates, and stripes were defined by using proton bombardment to produce high‐resistance current‐confining regions.Keywords
This publication has 16 references indexed in Scilit:
- Heterojunction lasers made of GaxIn1–xAsyP1–yand AlxGa1–xSbyAS1–ysolid solutionsSoviet Journal of Quantum Electronics, 1975
- Zero material dispersion in optical fibresElectronics Letters, 1975
- Transmission properties of a low−loss near−parabolic−index fiberApplied Physics Letters, 1975
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974
- Double-heterostructure GaAs : Si diode lasersApplied Physics Letters, 1972
- SEMICONDUCTOR LASERS OPERATING CONTINUOUSLY IN THE ``VISIBLE'' AT ROOM TEMPERATUREApplied Physics Letters, 1971
- EFFICIENT ELECTROLUMINESCENCE FROM InP DIODES GROWN BY LIQUID-PHASE EPITAXYApplied Physics Letters, 1970
- JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATUREApplied Physics Letters, 1970
- Isolation of junction devices in GaAs using proton bombardmentSolid-State Electronics, 1969