EFFICIENT ELECTROLUMINESCENCE FROM InP DIODES GROWN BY LIQUID-PHASE EPITAXY
- 1 November 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (9) , 373-376
- https://doi.org/10.1063/1.1653441
Abstract
Light‐emitting InP diodes were made by liquid‐phase epitaxy. The most efficient diodes result when the n‐type layers are grown from a Sn‐doped melt, while the p‐type layers are grown from the same melt, but overcompensated with Zn. External quantum efficiencies up to 0.75% at room temperature and 11.7% at 77°K were observed in uncoated diodes. Threshold current densities for stimulated emission were as low as 750 A/cm2 at 77°K. Spontaneous emission can be observed normal to the p‐n junction.Keywords
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