Double-heterostructure GaAs : Si diode lasers
- 15 September 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (6) , 287-289
- https://doi.org/10.1063/1.1654381
Abstract
Double‐heterostructure diode lasers with Si‐doped active regions have exhibited laser action within the wavelength range 9100–9500 Å under pulsed room‐temperature conditions. Threshold current densities are typically 4 × 103−1.1 × 104 A/cm2, and total power conversion efficiencies are ∼ 1–3%.Keywords
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