Long Lifetime (Laser) States in p-Type Si-Doped GaAs
- 1 May 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (6) , 2648-2651
- https://doi.org/10.1063/1.1659276
Abstract
Recombination lifetime measurements on Si‐doped GaAs light‐emitting diodes and on similarly doped p‐type thin platelets are presented. These data, in conjunction with earlier work, show that radiative recombination transitions with lifetimes as long as 10–100 nsec can be made to lase.This publication has 12 references indexed in Scilit:
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