Amphoterically Silicon-Doped Gallium Arsenide Laser
- 15 November 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (10) , 408-410
- https://doi.org/10.1063/1.1653749
Abstract
A successful attempt has been made in fabricating an amphoterically silicon‐doped gallium arsenide laser which operates at room temperature. Silicon doped n and p layers were grown in one step using the liquid phase epitaxy method. The threshold current densities were 3400 and 58 700 A/cm2 at 77 and 300 °K, respectively. The best beam divergence observed was 11 ° at the half‐power point. The heavily compensated p layer and long electron‐diffusion length were overcome by use of a potential barrier.Keywords
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