GaAs p-i-n photodiodes made by metalorganic chemical vapor deposition using tertiarybutylarsine and arsine
- 11 December 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (24) , 2532-2534
- https://doi.org/10.1063/1.101973
Abstract
High‐speed, 80‐μm‐diam, GaAs/Alx Ga1−x As p‐i‐n photodiodes having frequency response in excess of 7 GHz and internal quantum efficiency approaching 100% were fabricated by low‐pressure metalorganic chemical vapor deposition (MOCVD) using both tertiarybutylarsine (TBA) and arsine. These are the highest performance MOCVD GaAs devices achieved with nonarsine sources and comparable to the best reported p‐i‐n photodiodes of similar size. Net carrier concentration of the undoped TBA GaAs was determined by capacitance‐voltage analysis to be less than 5×1014 cm−3 . Photoluminescence measurements indicate that undoped TBA‐grown Alx Ga1−x As (x=0.25) is also of excellent quality (FWHM=12 meV). Growth conditions leading to optimized devices were found to be similar for the two sources.Keywords
This publication has 9 references indexed in Scilit:
- Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsineApplied Physics Letters, 1989
- Wideband frequency-response measurement of optical receivers using optical heterodyne detectionJournal of Lightwave Technology, 1989
- High-speed GaAs p-i-n photodiodes grown on Si substrates by molecular beam epitaxyApplied Physics Letters, 1988
- The use of organic As precursors in the low pressure MOCVD of GaAsJournal of Crystal Growth, 1988
- Growth of high-quality GaAs using trimethylgallium and diethylarsineApplied Physics Letters, 1987
- Use of tertiarybutylarsine for GaAs growthApplied Physics Letters, 1987
- Optical properties of AlxGa1−x AsJournal of Applied Physics, 1986
- The fabrication and assessment of high speed MOCVD GaAlAs pin detectorsJournal of Crystal Growth, 1984
- High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrateApplied Physics Letters, 1983