High-speed GaAs p-i-n photodiodes grown on Si substrates by molecular beam epitaxy
- 25 April 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (17) , 1410-1412
- https://doi.org/10.1063/1.99131
Abstract
We present results on high‐speed GaAs p‐i‐n photodiodes grown on Si substrates by molecular beam epitaxy. In addition to the dc operating characteristics, we also report the first impulse response and microwave frequency response measurements of GaAs‐on‐Si photodiodes. Results include an impulse response pulse width of 45 ps and a modulation corner frequency >4 GHz at a reverse bias of −3 V.Keywords
This publication has 6 references indexed in Scilit:
- High-frequency modulation of AlGaAs/GaAs lasers grown on Si substrate by molecular beam epitaxyApplied Physics Letters, 1988
- Low-threshold (∼600 A/cm2 at room temperature) GaAs/AlGaAs lasers on Si (100)Applied Physics Letters, 1987
- Continuous-wave operation of extremely low-threshold GaAs/AlGaAs broad-area injection lasers on (100) Si substrates at room temperatureOptics Letters, 1987
- Electrical activity of defects in molecular beam epitaxially grown GaAs on Si and its reduction by rapid thermal annealingApplied Physics Letters, 1987
- GaInAs PIN photodiodes grown on silicon substrates for 1.55 μm detectionElectronics Letters, 1987
- GaAs avalanche photodiodes and the effect of rapid thermal annealing on crystalline quality of GaAs grown on Si by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1987