Continuous-wave operation of extremely low-threshold GaAs/AlGaAs broad-area injection lasers on (100) Si substrates at room temperature
- 1 October 1987
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 12 (10) , 812-813
- https://doi.org/10.1364/ol.12.000812
Abstract
Room-temperature continuous-wave operation of large-area (120 μm × 980 μm) GaAs/AlGaAs graded-refractive-index separate-confinement heterostructure lasers on (100) Si substrates has been obtained. Minimum threshold-current densities of 214 A/cm2 (1900-μm cavity length), maximum slope efficiencies of about 0.8 W/A (600-μm cavity length),and optical power in excess of 270 mW/facet (900-μm cavity length) have been observed under pulsed conditions.Keywords
This publication has 4 references indexed in Scilit:
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- Low threshold laser operation at room temperature in GaAs/(Al,Ga)As structures grown directly on (100)SiApplied Physics Letters, 1986
- Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor depositionApplied Physics Letters, 1986
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