High-frequency modulation of AlGaAs/GaAs lasers grown on Si substrate by molecular beam epitaxy
- 22 February 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (8) , 605-606
- https://doi.org/10.1063/1.99378
Abstract
We report on the frequency response of quantum well lasers on Si substrates grown by molecular beam epitaxy. Ridge waveguide lasers of 10 μm×380 μm having threshold currents as low as 40 mA were used in this study. Measurements were performed up to a frequency of 4.5 GHz with a resultant modulation corner frequency of 2.5 GHz when the laser was operated about 20% above the threshold.Keywords
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