Reduced pressure MOVPE growth and characterization of GaAs/GaAlAs heterostructures using a triethylgallium source
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1) , 437-444
- https://doi.org/10.1016/0022-0248(84)90446-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Photoluminescence characterization of molecular beam epitaxial GaAs grown using cracked AsH3Applied Physics Letters, 1984
- Improved photoluminescence of organometallic vapor phase epitaxial AlGaAs using a new gettering technique on the arsine sourceApplied Physics Letters, 1983
- MOVPE Growth of Ga1-xAlxAs–GaAs Quantum Well HeterostructuresJapanese Journal of Applied Physics, 1982
- A new technique for gettering oxygen and moisture from gases used in semiconductor processingApplied Physics Letters, 1982
- High purity GaAs prepared from trimethylgallium and arsineJournal of Crystal Growth, 1981
- On the use of AsH3 in the molecular beam epitaxial growth of GaAsApplied Physics Letters, 1981
- Photoluminescence of shallow acceptors in epitaxial AlxGa1−xAsJournal of Applied Physics, 1980
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- Properties of Epitaxial GaAs Layers from a Triethyl Gallium and Arsine SystemJournal of the Electrochemical Society, 1975