A new technique for gettering oxygen and moisture from gases used in semiconductor processing
- 1 July 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (1) , 88-90
- https://doi.org/10.1063/1.93299
Abstract
A technique for the removal of small amounts of water vapor and oxygen from hydrogen and nitrogen is described in which the gas is purified by bubbling it through a gallium-indium- aluminum melt at room temperature. Using this technique, dew points of ⩽−80 °C are achieved when the starting gas contains as much as one part per thousand of water vapor.Keywords
This publication has 2 references indexed in Scilit:
- OMVPE growth of AlxGa1−xAsJournal of Crystal Growth, 1981
- Volatile metal-oxide incorporation in layers of GaAs, Ga1−xAlxAs and related compounds grown by molecular beam epitaxyApplied Physics Letters, 1981