Volatile metal-oxide incorporation in layers of GaAs, Ga1−xAlxAs and related compounds grown by molecular beam epitaxy
- 15 March 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (6) , 427-429
- https://doi.org/10.1063/1.92384
Abstract
A model is presented which relates the observed effects of substrate temperature and growth flux magnitudes upon layer quality to the presence of volatile oxides and the thermodynamics of the formation of nonvolatile oxides on the growthsurface. A means for reducing oxide contamination is presented and the consequent benefits explored.Keywords
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