Tertiary butylarsine grown GaAs solar cell
- 13 February 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (7) , 671-673
- https://doi.org/10.1063/1.100883
Abstract
High quality, intentionally doped (both p and n type) gallium arsenide layers have been grown using trimethylgallium and tertiary butylarsine in a low-pressure metalorganic chemical vapor deposition reactor. Using an alternate arsenic source, namely, tertiary butylarsine, a concentrator GaAs solar cell has been fabricated. Under 37 sun, air mass 1.5 illumination, the cell had an open-circuit voltage of 1.095 V, a fill factor of 83%, and an overall efficiency of 18.5%.Keywords
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