Band offset of GaAs-GaInP heterojunctions
- 1 December 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (12) , 2092-2096
- https://doi.org/10.1088/0268-1242/8/12/010
Abstract
N+-GaAs/n-GaInP lattice-matched heterostructures, grown by metalorganic vapour phase epitaxy, have been studied by capacitance-voltage, current-voltage and current-temperature techniques. This allowed the determination of the conduction band offset in three different and independent ways. The value obtained (0.24-0.25 eV) has been verified by photoluminescence and photoluminescence excitation on a 90 AA thick GaAs well in GaInP grown under the same conditions.Keywords
This publication has 10 references indexed in Scilit:
- Defects in epitaxial Si-doped GaInPJournal of Applied Physics, 1993
- The characteristics of an In0.5Ga0.5P and In0.5Ga0.5P/GaAs heterojunction grown on a (100) GaAs substrate by liquid-phase epitaxyJournal of Applied Physics, 1992
- Conduction-band discontinuity in InGaP/GaAs measured using both current-voltage and photoemission methodsApplied Physics Letters, 1992
- Internal photoemission and energy-band offsets in GaAs-GaInP p-I-N heterojunction photodiodesApplied Physics Letters, 1991
- Conduction- and valence-band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor depositionApplied Physics Letters, 1990
- Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling techniqueApplied Physics Letters, 1987
- Determination of valence and conduction-band discontinuities at the (Ga,In) P/GaAs heterojunction by C-V profilingJournal of Applied Physics, 1987
- Two-Dimensional Electron Gas at GaAs/Ga0.52In0.48P Heterointerface Grown by Chloride Vapor-Phase EpitaxyJapanese Journal of Applied Physics, 1986
- Heterostructure bipolar transistors: What should we build?Journal of Vacuum Science & Technology B, 1983
- Measurement of isotype heterojunction barriers by C-V profilingApplied Physics Letters, 1980