The characteristics of an In0.5Ga0.5P and In0.5Ga0.5P/GaAs heterojunction grown on a (100) GaAs substrate by liquid-phase epitaxy

Publisher Website
Google Scholar
Abstract
The growth of a high‐quality In0.5Ga0.5P/GaAs heterostructure on a (100) GaAs substrate by liquid‐phase epitaxy is demonstrated. This has been achieved by controlling the vaporizing time of phosphorus after the melt saturation procedure. The photoluminescence spectra of In0.5Ga0.5P/GaAs heteroepitaxial layers show that the major residual acceptor impurity is either carbon or silicon. The measured values of the conduction‐band discontinuity ΔEc and the fixed interface charge density σi for a In0.5Ga0.5P/GaAs heterostructure are 110 meV and 1×1011 cm−2, respectively. Only one electron trap with a thermal activation energy of Ea=0.32 eV, which is thought to be related to the anion vacancy, is found in Sn‐doped In0.5Ga0.5P (n∼1×1017 cm−3) layers.