MBE-grown (GaIn)P/GaAs heterojunction bipolar transistors exhibiting current gains up to 200
- 1 March 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (3) , 810-811
- https://doi.org/10.1109/16.47792
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Scaled AlInAs/InGaAs and InP/InGaAs heterostructure bipolar transistorsIEEE Transactions on Electron Devices, 1989
- High-gain GaInP/GaAs heterojunction phototransistor utilising guard-ring structureElectronics Letters, 1989
- Growth and characterisation of quantum wells and selectively doped heterostructures of InP/Ga0.47In0.53As grown by solid source MBEJournal of Crystal Growth, 1987
- Determination of valence and conduction-band discontinuities at the (Ga,In) P/GaAs heterojunction by C-V profilingJournal of Applied Physics, 1987
- Optimisation of spacer layer thickness in n -Al
x
Ga
1−
x
As/ p + -GaAs heterojunction diodes grown by molecular beam epitaxyElectronics Letters, 1986
- Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxyIEEE Electron Device Letters, 1985
- Heterostructure bipolar transistors: What should we build?Journal of Vacuum Science & Technology B, 1983