Two-Dimensional Electron Gas at GaAs/Ga_0.52In_0.48P Heterointerface Grown by Chloride Vapor-Phase Epitaxy

This publication has 14 references indexed in Scilit:

• Transient and persistent photoconductivity in n-Al_xGa_1-xAs and selectively doped n-Al_xGa_1-xAs/GaAs heterostructures
  Journal of Physics C: Solid State Physics, 1985
• Alloy Fluctuation Effect on Electronic Transition Properties of DX Center Observed with Modified Deep Level Transient Spectroscopy
  Japanese Journal of Applied Physics, 1985
• DX Deep Centers in Al_xGa_1-xAs Grown by Liquid-Phase Epitaxy
  Japanese Journal of Applied Physics, 1984
• Selectively-Doped GaAs/n-AlGaAs Heterostructures Grown by MOCVD
  Japanese Journal of Applied Physics, 1984
• Electron energy levels in GaAs-Ga1−xAlxAsheterojunctions
  Physical Review B, 1984
• Donor Levels in Si-Doped AlGaAs Grown by MBE
  Japanese Journal of Applied Physics, 1984
• A New Highly-Conductive (AlGa)As/GaAs/(AlGa)As Selectively-Doped Double-Heterojunction Field-Effect Transistor (SD-DH-FET)
  Japanese Journal of Applied Physics, 1984
• Alloy Fluctuation in Mixed Compound Semiconductors as Studied by Deep Level Transient Spectroscopy
  Japanese Journal of Applied Physics, 1984
• Trapping characteristics and a donor-complex ($\mathrm{DX}$) model for the persistent-photoconductivity trapping center in Te-doped ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$
  Physical Review B, 1979
• Luminescence from In0.5Ga0.5P prepared by vapor-phase epitaxy
  Journal of Applied Physics, 1973