Selectively-Doped GaAs/n-AlGaAs Heterostructures Grown by MOCVD

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Abstract
Selectively-doped GaAs/n-Al0.3Ga0.7As heterostructures were grown by reduced-pressure metalorganic chemical vapor deposition. It is shown that the growth conditions in an undoped Al0.3Ga0.7As spacer layer have a remarkable effect on the two-dimensional electron gas (2DEG) mobility. A 2DEG mobility of 150000 cm2/V·s is obtained for a sheet electron concentration (N s) of 6.9×1011 cm-2 at 4.2 K. The 2DEG mobility increases with incrasing N s as a result of exposure to light and reaches a maximum value of 180000 cm2/V·s at N s=7.8×1011 cm-2.