Si and Sn Doping in AlxGa1-xAs Grown by MBE
- 1 August 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (8A) , L476
- https://doi.org/10.1143/jjap.21.l476
Abstract
Electrical properties of Si and Sn doped Al x Ga1-x As epitaxial films grown by MBE have been studied in the wide range of AlAs mole fraction. With a constant doping level, decrease in the carrier concentration was observed around the direct-indirect band crossover point, for Si-doped and Sn-doped Al x Ga1-x As. Abrupt increase in donor ionization energy E D occurred in Si-doped Al x Ga1-x As films. These characteristics are similar to those reported for Te and Sn doped Al x Ga1-x As grown by LPE.Keywords
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