Electron mobilities in modulation-doped semiconductor heterojunction superlattices
- 1 October 1978
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (7) , 665-667
- https://doi.org/10.1063/1.90457
Abstract
GaAs‐AlxGa1−xAs superlattice structures in which electron mobilities exceed those of otherwise equivalent epitaxial GaAs as well as the Brooks‐Herring predictions near room temperature and at very low temperatures are reported. This new behavior is achieved via a modulation‐doping technique that spatially separates conduction electrons and their parent donor impurity atoms, thereby reducing the influence of ionized and neutral impurity scattering on the electron motion.Keywords
This publication has 9 references indexed in Scilit:
- In1−xGaxAs-GaSb1−yAsy heterojunctions by molecular beam epitaxyApplied Physics Letters, 1977
- Shubnikov—de Haas Oscillations in a Semiconductor SuperlatticePhysical Review Letters, 1977
- Epitaxial structures with alternate-atomic-layer composition modulationApplied Physics Letters, 1976
- Semiconductor superfine structures by computer-controlled molecular beam epitaxyThin Solid Films, 1976
- Electrical characterization of epitaxial layersThin Solid Films, 1976
- A one-dimensional SiGe superlattice grown by UHV epitaxyApplied Physics A, 1975
- Direct Observation of Superlattice Formation in a Semiconductor HeterostructurePhysical Review Letters, 1975
- New Transport Phenomenon in a Semiconductor "Superlattice"Physical Review Letters, 1974
- Electron States in Crystals with “nipi‐Superstructure”Physica Status Solidi (b), 1972