New Transport Phenomenon in a Semiconductor "Superlattice"
- 19 August 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 33 (8) , 495-498
- https://doi.org/10.1103/physrevlett.33.495
Abstract
We report electronic transport properties in a GaAs-AlAs periodic structure known as a "superlattice" prepared by a molecular-beam epitaxy. Its differential conductance in the superlattice direction first gradually decreases, followed by a rapid drop to negative values, then, at high fields, exhibits an oscillatory behavior with respect to applied voltages. This observation is interpreted in terms of the formation and expansion of a high-field domain. The voltage period of the oscillation provides the energy of the first-excited band which is in good agreement with that predicted by the theory.Keywords
This publication has 7 references indexed in Scilit:
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974
- Ga1−x Alx As superlattices profiled by Auger electron spectroscopyApplied Physics Letters, 1974
- Long Journey into TunnelingScience, 1974
- Structures Grown by Molecular Beam EpitaxyJournal of Vacuum Science and Technology, 1973
- Tunneling in a finite superlatticeApplied Physics Letters, 1973
- Stark ladders in solidsJournal of Physics C: Solid State Physics, 1972
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970