Resonant tunneling in semiconductor double barriers
- 15 June 1974
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (12) , 593-595
- https://doi.org/10.1063/1.1655067
Abstract
Resonant tunneling of electrons has been observed in double‐barrier structures having a thin GaAs sandwiched between two GaAlas barriers. The resonance manifests itself as peaks or humps in the tunneling current at voltages near the quasistationary states of the potential well. The structures have been fabricated by molecular beam epitaxy which produces extremely smooth films and interfaces.Keywords
This publication has 9 references indexed in Scilit:
- Field and thermionic-field emission in Schottky barriersPublished by Elsevier ,2002
- Ga1−x Alx As superlattices profiled by Auger electron spectroscopyApplied Physics Letters, 1974
- Structures Grown by Molecular Beam EpitaxyJournal of Vacuum Science and Technology, 1973
- Tunneling in a finite superlatticeApplied Physics Letters, 1973
- Interpretation of scanning high-energy electron diffraction measurements with application to GaAs surfacesJournal of Applied Physics, 1973
- Field-Emission Studies of Electronic Energy Levels of Adsorbed AtomsPhysical Review B, 1970
- Resonance-Tunneling Spectroscopy of Atoms Adsorbed on Metal Surfaces: TheoryPhysical Review B, 1970
- Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy GapsJournal of Applied Physics, 1969
- Tunneling from an Independent-Particle Point of ViewPhysical Review B, 1961