Ga1−x Alx As superlattices profiled by Auger electron spectroscopy
- 1 May 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (9) , 417-419
- https://doi.org/10.1063/1.1655242
Abstract
Superlattice structures made by molecular beam epitaxy are profiled by a combined technique of argon sputter etching and Auger electron spectroscopy. The superlattice, consisting of periodic layers of 50‐Å GaAs and Ga1−xAlxAs, probably represents the structure with the shortest period ever made and analyzed in monocrystalline semiconductors. Also established is the dependence of the intensity ratio of aluminum to arsenic signals of Auger transitions on the aluminum composition in Ga1−xAlxAs.Keywords
This publication has 7 references indexed in Scilit:
- Structures Grown by Molecular Beam EpitaxyJournal of Vacuum Science and Technology, 1973
- Profiling of periodic structures (GaAs–GaAlAs) by nuclear backscatteringJournal of Applied Physics, 1973
- Re-examination of Al {110} with low-energy electron diffraction and Auger spectroscopySurface Science, 1972
- Escape Depths of X-ray Excited ElectronsPhysica Scripta, 1972
- Auger and other characteristic energies in secondary electron spectra from Al surfacesSurface Science, 1971
- Identification of Auger spectra from aluminumSurface Science, 1971
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970