In1−xGaxAs-GaSb1−yAsy heterojunctions by molecular beam epitaxy
- 1 August 1977
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (3) , 211-213
- https://doi.org/10.1063/1.89609
Abstract
Smooth films of n‐In1−xGaxAs and p‐GaSb1−yAsy were grown by molecular beam epitaxy. As a function of the compositions, x and y, the lattice constants vary linearly while the energy gaps show a downward bowing. Abrupt heterojunctions made of these alloys with close lattice matching exhibit a series of current‐voltage characteristics which change from rectifying to Ohmic as x and y are reduced. The relative location of the band‐edge energies of the two semiconductors at the interface is shown to account for the unusual characteristics observed experimentally.Keywords
This publication has 9 references indexed in Scilit:
- A new semiconductor superlatticeApplied Physics Letters, 1977
- Interdiffusion between GaAs and AlAsApplied Physics Letters, 1976
- Semiconductor superfine structures by computer-controlled molecular beam epitaxyThin Solid Films, 1976
- Composition dependence of energy gap in GaInAs alloysJournal of Applied Physics, 1975
- Structures Grown by Molecular Beam EpitaxyJournal of Vacuum Science and Technology, 1973
- Energy gap variation in GaAsxSb1-x alloysPhysica Status Solidi (a), 1970
- Electronic Structures of Semiconductor AlloysPhysical Review B, 1970
- Thermal and Electrical Transport in InAs-GaAs AlloysJournal of Applied Physics, 1966
- Photoelectric Properties of Cleaved GaAs, GaSb, InAs, and InSb Surfaces; Comparison with Si and GePhysical Review B, 1965